High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics-Reference-Cited by-同舟云学术

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Published:2008-07-21 Issue:3 Volume:93 Page:033516
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin T. D.,Chiu H. C.,Chang P.,Tung L. T.,Chen C. P.,Hong M.,Kwo J.,Tsai W.,Wang Y. C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2956393

Reference24 articles.

1. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

2. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

3. Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

5. Energy-band parameters of atomic-layer-deposition Al2O3∕InGaAs heterostructure

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