Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces-Reference-Cited by-同舟云学术

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Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces

Published:1997-05 Issue: Volume:175-176 Page:422-427
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hong M.,Mannaerts J.P.,Bower J.E.,Kwo J.,Passlack M.,Hwang W.-Y.,Tu L.W.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. On the lower bounds of CMOS supply voltage

2. Physics and Chemistry of III–V Compounds Semiconductor Interfaces;Meiners,1985

3. Hydrogen sulfide plasma passivation of gallium arsenide

4. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions

5. Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

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2. GaAs MOSFETs with in situ Y₂O₃ dielectric: attainment of nearly thermally limited subthreshold slope and enhanced drain current via accumulation;Japanese Journal of Applied Physics;2023-12-01

3. Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

4. On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods;Applied Surface Science;2019-07

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