On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods-Reference-Cited by-同舟云学术

On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods

Published:2019-07 Issue: Volume:481 Page:1120-1126
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Escaño Mary Clare S.,Asubar Joel T.,Yatabe Zenji^ORCID,David Melanie Y.,Uenuma Mutsunori,Tokuda Hirokuni,Uraoka Yukiharu,Kuzuhara Masaaki,Tani Masahiko

Funder

University of Fukui

JSPS

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference60 articles.

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4. State of the art on gate insulation and surface passivation for GaN-based power HEMTs;Hashizume;Mat. Sci. Semicon. Proc.,2018

5. Total GaN solution to electrical power conversion;Wu;Proc. Device Res. Conf.,2011

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