Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100961
Reference10 articles.
1. Plasma Passivation Scheme for III–V Compound Semiconductor Surfaces
2. Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces
3. Unpinned (100) GaAs surfaces in air using photochemistry
4. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
5. Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interface
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