MAPbI<sub>3</sub> on GaAs: A Washable Heterointerface with Robust Passivation Effect-Reference-Cited by-同舟云学术

MAPbI₃ on GaAs: A Washable Heterointerface with Robust Passivation Effect

Published:2024-01-04 Issue:2 Volume:128 Page:867-876
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Manidakis E. G.¹²^ORCID,Tsikritzis D.³,Chatzarakis N. G.¹²,Androulidaki M.²,Tsagaraki K.²,Pavlopoulou E.⁴^ORCID,Stoumpos C. C.¹^ORCID,Pelekanos N. T.¹²

Affiliation:

1. Department of Materials Science & Technology, University of Crete, P.O. Box 2208, 71003 Heraklion, Greece

2. Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Greece

3. Department of Electrical & Computer Engineering, Hellenic Mediterranean University, 71410 Heraklion, Greece

4. Institute of Electronic Structure & Laser, FORTH, P.O. Box 1385, 71110 Heraklion, Greece

Funder

State Scholarships Foundation

European Regional Development Fund

H2020 Energy

Government of Greece

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.3c05799

Reference43 articles.

1. Semiconducting and other major properties of gallium arsenide

2. High-efficiency GaAs solar cells grown by molecular-beam epitaxy

3. High-efficiency (>20% AM0) GaAs solar cells grown on inactive-Ge substrates

4. High-Power InAlGaAs/GaAs and AlGaAs/GaAs Semiconductor Laser Arrays Emitting at 808 nm

5. Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 4F-Phenethylammonium chloride as a key component for interfacial engineering of wide-bandgap perovskite absorber;Nano Energy;2024-09