MBE growth and characterization of gallium oxide
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Elsevier
Reference66 articles.
1. Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures
2. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
3. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3
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5. MBE of transparent semiconducting oxides A2;Bierwagen,2013
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1. Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films;Applied Spectroscopy;2024-08-02
2. Tin Gallium Oxide Epilayers on Different Substrates: Optical and Compositional Analysis;physica status solidi (b);2024-07-02
3. Trench gate β-Ga2O3 MOSFETs: a review;Engineering Research Express;2023-03-01
4. Quantitative x-ray diffraction analysis of strain and interdiffusion in β-Ga2O3 superlattices of μ-Fe2O3 and β-(AlxGa1−x)2O3;Journal of Vacuum Science & Technology A;2022-12
5. Characteristics of Vertical Ga2O3 Schottky Junctions with the Interfacial Hexagonal Boron Nitride Film;ACS Omega;2022-07-22
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