Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)-Reference-Cited by-同舟云学术

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Structural and Electrical Properties of HfO2/n-InxGa1-xAs structures (x: 0, 0.15, 0.3 and 0.53)

Published:2019-12-17 Issue:6 Volume:25 Page:113-127
ISSN:1938-6737
Container-title:ECS Transactions
language:
Short-container-title:ECS Trans.

Author:

Hurley Paul K.,O'Connor Eamon,Monaghan Scott,Long Rathnait,O'Mahony Aileen,Povey Ian M.,Cherkaoui Karim,MacHale John,Quinn Aidan,Brammertz Guy,Heyns Marc M.,Newcomb Simon,Afanas'ev Valeri V.,Sonnet Arif,Galatage Rohit,Jivani Naqi,Vogel Eric,Wallace Robert M.,Pemble Martyn

Publisher

The Electrochemical Society

Link

https://iopscience.iop.org/article/10.1149/1.3206612/pdf

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of electronic structure, optical properties, map of electrostatic potential, and toxicity of HfO2, Hf0.88Si0.12O2, Hf0.88Ge0.12O2 and Hf0.88Sn0.12O2 by computational and virtual screening;Journal of Computational Electronics;2022-11-07

2. First principles modeling of defects in the Al2O3/In0.53Ga0.47As system;Journal of Applied Physics;2017-02-21

3. A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system;Microelectronic Engineering;2015-11

4. Crystallization of HfO2in InAs/HfO2core–shell nanowires;Nanotechnology;2014-09-11

5. A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures;Journal of Applied Physics;2014-07-14

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