First principles modeling of defects in the Al2O3/In0.53Ga0.47As system
Author:
Affiliation:
1. Tyndall National Institute, Lee Maltings, Prospect Row, Cork, Ireland
2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-2201, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975033
Reference49 articles.
1. Theory of Defects in Semiconductors
2. Atomic structure of point defects in compound semiconductor surfaces
3. (Invited) Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET Characteristics
4. Power-constrained CMOS scaling limits
5. Nanometre-scale electronics with III–V compound semiconductors
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical and mechanical properties variation of Al2O3–CaO-CNT(3,3) nanomaterial due to Al vacancy and temperature: DFT approach;Results in Materials;2024-06
2. Post-deposition annealing process as a defect-driven tool for tuning the chemical and electron properties of sol–gel spin-coated aluminium oxide thin layers;Applied Surface Science;2023-12
3. Efficient device simulations using density functional theory Hamiltonian and non-equilibrium Green’s function: heterostructure mode space method and core charge approximation;Journal of Computational Electronics;2023-05-22
4. First-Principles-Based Quantum Transport Simulations of Interfacial Point Defect Effects on InAs Nanowire Tunnel FETs;IEEE Transactions on Electron Devices;2021-11
5. Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs;Solid-State Electronics;2020-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3