Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs-Reference-Cited by-同舟云学术

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Effects of traps in the gate stack on the small-signal RF response of III-V nanowire MOSFETs

Published:2020-09 Issue: Volume:171 Page:107840
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hellenbrand Markus,Lind Erik,Kilpi Olli-Pekka,Wernersson Lars-Erik

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. 20-nm In0.8 Ga0.2 As MOSHEMT MMIC technology on silicon;Tessmann;IEEE J Solid-State Circuits,2019

2. Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited);Franco;IEEE International Electron Devices Meeting (IEDM),2017

3. Ubiquitous relaxation in BTI stressing-new evaluation and insights;Kaczer;IEEE International Reliability Physics Symposium,2008

4. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces;Engel-Herbert;J Appl Phys,2010

5. III-V compound semiconductor transistors-from planar to nanowire structures;Riel;MRS Bull,2014

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1. RF Characterization of Ferroelectric MOS Capacitors;IEEE Electron Device Letters;2024-09

2. Inversion-Mode InGaAs FinFETs for Logic and RF Applications;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

3. High Performance Inversion-Mode In_0.53Ga_0.47As FinFETs for Logic and RF Applications;IEEE Transactions on Nanotechnology;2023

4. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors;Advanced Materials;2022-11-07

5. The Impact of Width Downscaling on the High-Frequency Characteristics of InGaAs Nanowire FETs;IEEE Journal of the Electron Devices Society;2022

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