A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system-Reference-Cited by-同舟云学术

A study of capacitance–voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

Published:2015-11 Issue: Volume:147 Page:273-276
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Lin Jun,Monaghan Scott,Cherkaoui Karim,Povey Ian,O’Connor Éamon,Sheehan Brendan,Hurley Paul

Funder

Science Foundation Ireland

INVENT project

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric

2. Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

3. Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

4. Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

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