Crystallization of HfO2in InAs/HfO2core–shell nanowires-Reference-Cited by-同舟云学术

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Crystallization of HfO2in InAs/HfO2core–shell nanowires

Published:2014-09-11 Issue:40 Volume:25 Page:405701
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Rieger T,Jörres T,Vogel J,Biermanns A,Pietsch U,Grützmacher D,Lepsa M I

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Reference36 articles.

1. GaAs interfacial self-cleaning by atomic layer deposition

2. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2

3. Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC

4. Interface composition of InAs nanowires with Al2O3 and HfO2 thin films

5. Crystal structure and band gap determination of HfO2 thin films

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduced annealing temperature for ferroelectric HZO on InAs with enhanced polarization;Applied Physics Letters;2020-02-10

2. Flexible Electronics Based on Micro/Nanostructured Paper;Advanced Materials;2018-07-31

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