Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1641527
Reference18 articles.
1. Status of the GaAs metal—oxide—semiconductor technology
2. Unpinned GaAs MOS capacitors and transistors
3. A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer
4. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
5. Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film
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