White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO2/Al2O3 and Al2O3/HfO2/Al2O3 Gate Dielectric Stacks for High Total Doses-Reference-Cited by-同舟云学术

White X-Ray Radiation Effects in MOS Capacitors With Atomic Layer Deposited HfO₂/Al₂O₃ and Al₂O₃/HfO₂/Al₂O₃ Gate Dielectric Stacks for High Total Doses

Published:2023-03 Issue:1 Volume:23 Page:109-115
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Zhao Hongda¹^ORCID,Zheng Zhongshan¹^ORCID,Zhu Huiping¹,Wang Lei¹^ORCID,Li Bo¹^ORCID,Zhang Zichen¹,Wang Shanfeng²,Yuan Qingxi²,Jiao Jian³

Affiliation:

1. Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing, China

2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China

3. Technology and Engineering Center for Space Utilization, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Key Research Program of Frontier Sciences, Chinese Academy of Sciences

Innovation Center of Radiation Application

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10063987/10007647.pdf?arnumber=10007647

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2. Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics;xu;Phys Rev Lett,2009

3. High transconductance ion-implanted GaN MISFETs using atomic layer deposited high-k dielectrics

4. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

5. Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model