Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2732821
Reference23 articles.
1. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
2. Chemical and electrical characterization of Gd2O3∕GaAs interface improved by sulfur passivation
3. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
4. Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric
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