Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs
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Published:2018-04-01
Issue:4
Volume:13
Page:454-457
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ISSN:1555-130X
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Container-title:Journal of Nanoelectronics and Optoelectronics
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language:en
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Short-container-title:Journal of Nanoelectronics and Optoelectronics
Author:
Kao Tsung-Hsien,Chang Sheng-Po,Chang Shoou-Jinn
Publisher
American Scientific Publishers
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials