Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
Author:
Affiliation:
1. Electrical and Information Technology, ‡Solid State Physics, and §Synchrotron Radiation Research, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
Funder
Vetenskapsrådet
Crafoordska Stiftelsen
Knut och Alice Wallenbergs Stiftelse
Stiftelsen för Strategisk Forskning
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b05253
Reference42 articles.
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4. Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs
5. Vertical nanowire InGaAs MOSFETs fabricated by a top-down approach
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