Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces-Reference-Cited by-同舟云学术

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Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces

Published:2022-08 Issue: Volume:593 Page:153336
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Liu Yen-Po,Yngman Sofie,Troian Andrea,D'Acunto Giulio,Jönsson Adam,Svensson Johannes,Mikkelsen Anders,Wernersson Lars-Erik,Timm Rainer

Funder

Vetenskapsrådet

Fourth Framework Programme

Knut och Alice Wallenbergs Stiftelse

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference35 articles.

1. III–V compound semiconductor transistors—from planar to nanowire structures;Riel;MRS Bull.,2014

2. Narrow gap nanowires: from nanotechnology to RF-circuits on Si;Wernersson;J. Appl. Phys.,2015

3. Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures;Arbiol;Mater. Today,2013

4. Low trap density in InAs/High-k nanowire gate stacks with optimized growth and doping conditions;Wu;Nano Lett.,2016

5. X. Zhao, C. Heidelberger, E.A. Fitzgerald, W. Lu, A. Vardi, J.A. del Alamo, Sub-10 nm diameter InGaAs vertical nanowire MOSFETs, in: 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2017, pp. 17.2.1–17.2.4. 10.1109/IEDM.2017.8268407.

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1. Dry cleaning of InSb surfaces by hydrogen molecule exposure in ultrahigh vacuum;Applied Surface Science;2024-12

2. Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals;Vacuum;2024-11

3. Regulate the chemical property of the carbon nanospheres layer modified on the surface of sodium metal anode to achieve high-load battery;Nano Research;2024-09-03

4. Ultrahigh vacuum Raman spectroscopy for the preparation of III–V semiconductor surfaces;Review of Scientific Instruments;2023-12-01

5. Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence;Nano Express;2022-12-01

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