Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals-Reference-Cited by-同舟云学术

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Effect of N2-H2 remote plasma nitridation temperature on surface properties of Te-doped GaSb crystals

Published:2024-11 Issue: Volume:229 Page:113580
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Qin Zhentao,Xu Lingyan^ORCID,Liu Pengfei,Liang Zhao,Yu Ruizhi,Liang Lu,Wang Yingming,Qin Chi,Jiang Kai,Shang Rongjin,Cao Yuwei,Jie Wanqi

Publisher

Elsevier BV

Reference68 articles.

1. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3;Ali;Appl. Phys. Lett.,2010

2. Hydrogen ion-beam induced changes in the photoluminescence of GaSb/AlSb MQW structures;Capizzi;Superlattice. Microst.,1989

3. A study of oxygen interaction with GaSb cleaved surfaces by work function and photovoltage measurements;Bonnet;Thin Solid Films,1987

4. GaSb-oxide removal and surface passivation using an electron cyclotron resonance hydrogen source;Lu;J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,1992

5. Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2;Timm;Appl. Phys. Lett.,2010

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