Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3495776
Reference20 articles.
1. Surface Defects and Passivation of Ge and III–V Interfaces
2. Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices
3. Interface models and processing technologies for surface passivation and interface control in III–V semiconductor nanoelectronics
4. Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
5. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
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