Temperature Dependence on Surface Properties for Te-Doped GASB Crystals with N2-H2 Remote Plasma Nitridation

Author:

Qin Zhentao,Xu Lingyan,Liu Pengfei,Liang Zhao,Yu Ruizhi,Liang Lu,Wang Yingming,Qin Chi,Jiang Kai,Shang Rongjin,Cao Yuwei,Jie Wanqi

Publisher

Elsevier BV

Reference59 articles.

1. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al 2 O 3 [J];A Ali;Applied Physics Letters,2010

2. Hydrogen ion-beam induced changes in the photoluminescence of GaSb/AlSb MQW structures;M Capizzi;Superlattices and Microstructures,1989

3. A study of oxygen interaction with GaSb cleaved surfaces by work function and photovoltage measurements[J];J Bonnet;Thin solid films,1987

4. GaSboxide removal and surface passivation using an electron cyclotron resonance hydrogen source[J];Z Lu;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,1992

5. Reduction of native oxides on InAs by atomic layer deposited Al 2 O 3 and HfO 2 [J];R Timm;Applied Physics Letters,2010

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3