Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3281027
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1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
2. Unified defect model and beyond
3. Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
4. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
5. Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)
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