Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation-Reference-Cited by-同舟云学术

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Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

Published:2009-12-15 Issue:12 Volume:106 Page:124508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kim Eun Ji,Chagarov Evgueni,Cagnon Joël,Yuan Yu,Kummel Andrew C.,Asbeck Peter M.,Stemmer Susanne,Saraswat Krishna C.,McIntyre Paul C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3266006

Reference48 articles.

1. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications

2. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation

3. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor

4. The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)

5. Simplified Surface Preparation for GaAs Passivation Using Atomic Layer-Deposited High- $\kappa$ Dielectrics

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1. Characterization of interface properties of Al₂O₃/n-GaSb and Al₂O₃/InAs/n-GaSb metal-oxide-semiconductor structures;Japanese Journal of Applied Physics;2022-05-25

2. A review of atomic layer deposition modelling and simulation methodologies: Density functional theory and molecular dynamics;Nanotechnology Reviews;2022-01-01

3. Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs;Semiconductor Science and Technology;2021-11-03

4. Stabilization of unstable and metastable InP native oxide thin films by interface effects;Applied Surface Science;2021-11

5. Design and Development of BTI Model and 3D InGaAs HEMT-Based SRAM for Reliable and Secure Internet of Things Application;Electronics;2020-03-11

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