1. Proceedings of the fourth international symposium on cleaning technology in semiconductor device manufacturing. Edited by R. E. Novak, J. Ruzyllo, Electrochemical Society Proceedings 95-20 (1996).
2. T. Takahagi, S. Shingubara, H. Sakaue, Wet preparation of defect-free hydrogen-terminated silicon wafer surface and its characterization in atomic-scale. (UCPSS 2000), Sol. State Phenom. 76-77 (2001) 105.
3. The increasing importance of the use of ozone in the microelectronics industry;De Smedt;Ozone Sci. Eng.,2002
4. On the application of a thin ozone based wet chemical oxide as an interface for ALD high-k deposition, Diff;Onsia;Defect Data Pt.b: Sol. State Phenom.,2005
5. Preparation of an Ultraclean and Atomically Controlled Hydrogen-Terminated Si(111)-(1× 1) Surface Revealed by High Resolution Electron Energy Loss Spectroscopy, Atomic Force Microscopy, and Scanning Tunneling Microscopy: Aqueous NH4F Etching Process of Si(111)