Oxygen relocation during HfO<sub>2</sub> ALD on InAs-Reference-Cited by-同舟云学术

Oxygen relocation during HfO₂ ALD on InAs

Published:2022 Issue: Volume:236 Page:71-85
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

D’Acunto Giulio¹²^ORCID,Kokkonen Esko³^ORCID,Shayesteh Payam¹²,Boix Virginia¹²,Rehman Foqia¹²,Mosahebfard Zohreh¹²⁴,Lind Erik²⁵,Schnadt Joachim¹²³^ORCID,Timm Rainer¹²^ORCID

Affiliation:

1. Division of Synchrotron Radiation Research, Department of Physics, Lund University, 22100 Lund, Sweden

2. NanoLund Center for Nanoscience, Lund University, 22100 Lund, Sweden

3. MAX IV Laboratory, Lund University, 22100 Lund, Sweden

4. Department of Physics, University of Siegen, 57072 Siegen, Germany

5. Department of Electrical and Information Technology, Lund University, 22100 Lund, Sweden

Abstract

In situ and time-resolved APXPS reveals the initial ALD process beyond the standard ligand exchange model, resulting in native oxide-free InAs/HfO2 interfaces for high-speed MOSFET.

Funder

Svenska Forskningsrådet Formas

Vetenskapsrådet

VINNOVA

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D1FD00116G

Reference43 articles.

1. M.Graef , International Roadmap for Devices and Systems - More than Moore - IRDS , https://irds.ieee.org/editions/2020