ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4945430
Reference31 articles.
1. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors
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5. High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics
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