High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics-Reference-Cited by-同舟云学术

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High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics

Published:2013-04-15 Issue:15 Volume:102 Page:153513
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takei Kuniharu,Kapadia Rehan,Fang Hui,Plis E.,Krishna Sanjay,Javey Ali

Funder

U.S. Department of Energy

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4802779

Reference20 articles.

1. Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

2. Nanometre-scale electronics with III–V compound semiconductors

3. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

4. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

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3. Complex High-κ Oxides for Gate Dielectric Applications;Journal of Electronic Materials;2022-06-22

4. Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y₂O₃;Nanoscale;2022

5. Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation;ACS Applied Electronic Materials;2021-11-16

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