Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation-Reference-Cited by-同舟云学术

Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation

Published:2021-11-16 Issue:12 Volume:3 Page:5483-5495
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Zhang Jie¹^ORCID,Jia Meng²^ORCID,Sales Maria Gabriela³,Zhao Yong⁴,Lin Guangyang¹,Cui Peng¹^ORCID,Santiwipharat Chaiwarut¹,Ni Chaoying⁴^ORCID,McDonnell Stephen³,Zeng Yuping¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716, United States

2. Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States

3. Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States

4. Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States

Funder

Air Force Office of Scientific Research

NASA EPSCoR

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00909

Reference71 articles.

1. The development of flexible integrated circuits based on thin-film transistors

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4. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

5. Thin-Film Transistors

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