Low voltage-driven, high-performance TiO<sub>2</sub> thin film transistors with MHz switching speed-Reference-Cited by-同舟云学术

Low voltage-driven, high-performance TiO₂ thin film transistors with MHz switching speed

Published:2024 Issue:9 Volume:14 Page:6058-6063
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Chen Xiaoping¹²³,Ni Jiancong¹²³,Yang Weiqiang¹²³^ORCID,Ke Shaoying⁴,Zhang Maosheng¹²³^ORCID

Affiliation:

1. Department of Chemistry, School of Chemistry and Chemical Engineering and Environment, Minnan Normal University, Zhangzhou 36300, China

2. Fujian Provincial Key Laboratory of Modern Analytical Science and Separation Technology, Minnan Normal University, Zhangzhou, 363000, China

3. Fujian Provincial University Key Laboratory of Pollution Monitoring and Control, Minnan Normal University, Zhangzhou 36300, China

4. College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

Abstract

CMOS-compatible TiO2 transistors with on–off ratios of 107, a subthreshold swing of ∼150 mV Dec−1 averaged over four orders of magnitude, and excellent gate-pulse switching at 1.0 Hz to 1.0 MHz to be used as logic gates with a voltage gain of 4.8.

Funder

Minnan Normal University

Natural Science Foundation of Fujian Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/RA/D3RA08447G

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