1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2918835
Reference16 articles.
1. Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer
2. Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric
3. Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion
4. Novel Ga2O3 (Ga2O3) passivation techniques to produce low Dit oxide-GaAs interfaces
5. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films
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