Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

Published:2022-06-16 Issue:23 Volume:9 Page:2104599
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Shen Chengxu¹,Yin Zhigang¹²³^ORCID,Collins Fionn¹,Pinna Nicola¹^ORCID

Affiliation:

1. Institut für Chemie and IRIS Adlershof Humboldt‐Universität zu Berlin Brook‐Taylor‐Str. 2 Berlin 12489 Germany

2. State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences 155 Yangqiao West Road Fuzhou Fujian 350002 China

3. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202104599

Reference290 articles.

1. Nanomaterials in transistors: From high-performance to thin-film applications

2. Skin electronics from scalable fabrication of an intrinsically stretchable transistor array

3. Toward a new generation of smart skins

4. Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

5. Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features

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