Photoreflectance study of GaAsSb∕InP heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2142099
Reference22 articles.
1. Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAsNpNdouble-heterojunction bipolar transistor structure
2. Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures
3. Observation of enhanced transport in carbon-doped InGaAsN after in situ anneal and its impact on performance of NpN InGaP/InGaAsN heterojunction bipolar transistors
4. Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunction bipolar transistor structures based on their line-shape analysis
5. Photoreflectance investigations of complex structures
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2. Effect of Piezoelectric Filed on the Optical Properties of (311) A and (311) B Oriented InAlAs/InP Heterostructures;Perovskite and Piezoelectric Materials;2021-01-27
3. Effect of piezoelectric field on type II transition in InAlAs/InP (311) alloys with different substrate polarity;Journal of Alloys and Compounds;2018-03
4. Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics;Applied Physics Letters;2012-04-23
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