Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAsNpNdouble-heterojunction bipolar transistor structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405823
Reference22 articles.
1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron
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3. Oxygen-deficiency-activated charge ordering in La2/3Sr1/3MnO3−δ thin films
4. Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
5. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
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1. Microphotoreflectance spectroscopy of heterojunction bipolar transistors under biasing voltage: Measurement of the net doping concentration;Applied Physics Letters;2007-06-25
2. Photoreflectance study at the micrometer scale;Applied Surface Science;2006-10
3. Photoreflectance study of GaAsSb∕InP heterostructures;Journal of Applied Physics;2005-12-15
4. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy;physica status solidi (a);2005-05
5. Practical photoluminescence and photoreflectance spectroscopic system for optical characterization of semiconductor devices;Optics Express;2005
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