Optical study of GaAs1−xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference27 articles.
1. High‐power multiple‐quantum‐well GaInAsSb/AlGaAsSb diode lasers emitting at 2.1 μm with low threshold current density
2. Room‐temperature 2.78 μm AlGaAsSb/InGaAsSb quantum‐well lasers
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4. Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy
5. 1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy
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1. Optoelectronic properties of Sb doped GaAs: DFT investigation;Indian Journal of Physics;2024-06-14
2. Ab-initio study on the phase transition, elastic, optoelectronic, and thermodynamic properties of GaAs1-xSbx;Optik;2020-10
3. Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime;Journal of Materials Science: Materials in Electronics;2020-03-04
4. First-Principles Investigation of Electronic Properties of GaAsxSb1-x Ternary Alloys;SEMICONDUCTORS+;2019
5. First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys;Semiconductors;2019-12
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