1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20040119?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
2. Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates
3. Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy
4. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
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1. Optimization of 1300 nm quantum well laser on GaAs substrates;SPIE Proceedings;2014-12-09
2. Optical study of GaAs1−xSbx layers grown on GaAs substrates by gas-source molecular beam epitaxy;Materials Chemistry and Physics;2010-11
3. GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer;Applied Physics Letters;2009-03-16
4. GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer;Electronics Letters;2009
5. Narrow Band Gap Semiconductors;Wiley Encyclopedia of Electrical and Electronics Engineering;2007-04-16
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