Low-threshold current GaAsSb∕GaAs quantum well lasers grown by solid source molecular beam epitaxy
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020932?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
2. High-performance InAs quantum-dot lasers near 1.3 μm
3. Low threshold current density GaAsSb quantum well (QW) lasers grown by metal organic chemical vapour deposition on GaAs substrates
4. Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates
5. Continuous-wave operation of a 1.3-/spl mu/m GaAsSb-GaAs quantum-well vertical-cavity surface-emitting laser at room temperature
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2. Optimization of 1300 nm quantum well laser on GaAs substrates;SPIE Proceedings;2014-12-09
3. Optical characterization of a GaAsSb/GaAs/GaAsP strain-compensated quantum well structure grown by metal-organic vapor phase epitaxy;Journal of Crystal Growth;2013-05
4. Twinning in GaAsSb grown on (1 1 1)B GaAs by molecular beam epitaxy;Journal of Physics D: Applied Physics;2012-12-10
5. Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy;Materials Chemistry and Physics;2012-06
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