GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2009.1243?crawler=true&mimetype=application/pdf
Reference6 articles.
1. 1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy
2. Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 [micro sign]m
3. GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
4. The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band Absorption
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