Room temperature operation of GaAsSb/GaAs quantum well VCSELs at 1.29 [micro sign]m
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001469?crawler=true&mimetype=application/pdf
Reference9 articles.
1. 1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser
2. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
3. GaAsSb: A novel material for 1.3 [micro sign]m VCSELs
4. Uniform threshold current, continuous-wave, singlemode 1300 nm vertical cavity lasers from 0 to 70°C
5. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 [micro sign]m
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2. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures;Semiconductors;2015-10
3. Optimization of 1300 nm quantum well laser on GaAs substrates;SPIE Proceedings;2014-12-09
4. Long-Wavelength VCSELs with Buried Tunnel Junction;Springer Series in Optical Sciences;2012-10-16
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