Carrier dynamics in type-II GaAsSb/GaAs quantum wells
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/24/i=18/a=185801/pdf
Reference30 articles.
1. Optical gain of strained GaAsSb/GaAs quantum-well lasers: A self-consistent approach
2. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
3. Optical properties of strained antimonide-based heterostructures
4. Selectively excited photoluminescence of GaAs1−xSbx/GaAs single quantum wells
5. Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy
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2. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure;Applied Physics Letters;2023-04-24
3. Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers;Journal of Applied Physics;2022-10-07
4. Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AIGaAsSb Multiple Quantum Wells Material;CHIN J LASERS;2021
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