Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films-Reference-Cited by-同舟云学术

Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films

Published:2023-09-18 Issue:39 Volume:8 Page:36355-36360
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Smołka Tristan¹^ORCID,Rygała Michał¹^ORCID,Hilska Joonas²,Puustinen Janne²,Koivusalo Eero²,Guina Mircea²,Motyka Marcin¹^ORCID

Affiliation:

1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

2. Optoelectronics Research Centre, Physics Unit, Tampere University, Korkeakoulunkatu 3, 33720 Tampere, Finland

Funder

Narodowe Centrum Nauki

Academy of Finland

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c05046

Reference30 articles.

1. GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation

2. Shortwave quantum cascade laser frequency comb for multi-heterodyne spectroscopy

3. Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

4. Dual-comb spectroscopy based on quantum-cascade-laser frequency combs

5. Frequency stability of a 10 GHz optical frequency comb from a semiconductor-based mode-locked laser with an intracavity 10,000 finesse etalon

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