GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation-Reference-Cited by-同舟云学术

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GaSb-based >3µm laser diodes grown with up to 2.4% compressive strain in the quantum wells using strain compensation

Published:2015-08 Issue: Volume:424 Page:24-27
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kaspi Ron,Lu Chunte A.,Newell Tim C.,Yang Chi,Luong Sanh

Funder

Air Force Office of Scientific Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Type-I Diode Lasers for Spectral Region Above 3 μm

2. Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers

3. Continuous-wave operation of type-I quantum well DFB laser diodes emitting in 3.4 [micro sign]m wavelength range around room temperature

4. External cavity tunable type-I diode laser with continuous-wave singlemode operation at 3.24 [micro sign]m

5. Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with > 2.5 µm

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1. Influence of the Bismuth Content on the Optical Properties and Photoluminescence Decay Time in GaSbBi Films;ACS Omega;2023-09-18

2. Strain compensated type II superlattices grown by molecular beam epitaxy;Chinese Physics B;2023-03-01

3. GaSb-based angled cavity semiconductor lasers;2022 28th International Semiconductor Laser Conference (ISLC);2022-10-16

4. Passively Q-switched Er:Lu2O3 laser at 28 µm with TiC saturable absorber;Applied Optics;2020-09-11

5. Applications of III-V Semiconductors for Mid-infrared Lasers;Molecular Beam Epitaxy;2019-02-08

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