Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing-Reference-Cited by-同舟云学术

Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing

Published:2024-07-05 Issue:8 Volume:56 Page:
ISSN:1572-817X
Container-title:Optical and Quantum Electronics
language:en
Short-container-title:Opt Quant Electron

Author:

Jain Neelesh,Mal Indranil,Tarek Hidouri,Samajdar Dip Prakash

Funder

Human Resource Development Centre, Council of Scientific And Industrial Research

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11082-024-07111-1.pdf

Reference58 articles.

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5. Ben Ahmed, A., Saidi, H., Msahli, M., Ridene, S.: Optical gain in type-II InAsN/GaSb strained quantum wells laser diodes and its pressure dependence. IEEE J. Quantum Electron., 53(2), 1–8 (2017). https://doi.org/10.1109/JQE.2017.2678206