Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365061
Reference16 articles.
1. GaAsSb: A novel material for 1.3 [micro sign]m VCSELs
2. Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer‐quantum well
3. Band lineup inGaAs1−xSbx/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy
4. Evidence of type-I band offsets in strainedGaAs1−xSbx/GaAs quantum wells from high-pressure photoluminescence
5. Optical non-linearities due to charge transfer in type II heterostructures
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