Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques-Reference-Cited by-同舟云学术

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Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques

Published:2015-08-04 Issue:9 Volume:54 Page:091201
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsu Hung-Pin,Wu Jiun-De,Lin Yan-Jih,Huang Ying-Sheng,Lin You-Ru,Lin Hao-Hsiung

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=9/a=091201/pdf

Reference33 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Electrically pumped 13 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer

3. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing

4. Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

5. Characteristics of high-operating-temperature InAs∕GaAs quantum-dot infrared detectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates;Journal of Applied Physics;2024-01-22

2. Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors;Journal of Applied Physics;2016-03-07

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