Charge carrier localization effects on the quantum efficiency and operating temperature range of InAsxP1−x/InP quantum well detectors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4943031
Reference41 articles.
1. Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers
2. Room temperature, continuous-wave coupled-cavity InAsP/InP photonic crystal laser with enhanced far-field emission directionality
3. Discretization of Electronic States in LargeInAsP/InPMultilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy
4. Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform
5. Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
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1. Influence of interface states on built-in electric field and diamagnetic-Landau energy shifts in asymmetric modulation-doped InGaAs/GaAs QWs;Journal of Physics D: Applied Physics;2022-07-11
2. Electric and magnetic field effects on the exciton localization in a modulation doped InGaAs/GaAs quantum well;DAE SOLID STATE PHYSICS SYMPOSIUM 2019;2020
3. Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy;Applied Surface Science;2019-05
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