GaAs0.7Sb0.3/GaAs type-II quantum well with an adjacent InAs quantum-dot stressor layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3100191
Reference9 articles.
1. Quantum-dot heterostructure lasers
2. 1.3 [micro sign]m GaAs∕GaAsSb quantum well laser grown by solid source molecular beam epitaxy
3. Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
4. Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer
5. Luminescence from excited states in strain-inducedInxGa1−xAs quantum dots
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of GaAsSb/GaAs type-II quantum well with top InAs quantum dot layer using complementary spectroscopy techniques;Japanese Journal of Applied Physics;2015-08-04
2. GaAs0.7Sb0.3/GaAs type-II quantum-well laser with adjacent InAs quantum-dot layer;Electronics Letters;2009
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