Room temperature emission at 1.6μm from InGaAs quantum dots capped with GaAsSb
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130529
Reference12 articles.
1. GaAs-based long-wavelength lasers
2. High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range
3. Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm
4. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
5. Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters
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