InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1582229
Reference10 articles.
1. Self-Formed $\bf In_{0.5}Ga_{0.5}As$ Quantum Dots on GaAs Substrates Emitting at $\bf 1.3\,{\mbi {\mu}}m$
2. Low-threshold oxide-confined 1.3-μm quantum-dot laser
3. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
4. Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
5. Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature
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