InAs/InGaAs Quantum Dot Lasers on Multi-Functional Metamorphic Buffer Layers
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference22 articles.
1. Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m
2. 1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
3. 1.3 μm Strain-Compensated InGaAsP Planar Buried Heterostructure Laser Diodes with a TO-Can Package for Optical Fiber Communications
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