Photoluminescence Intensity Dependence of InGaAs MQW on Relaxation Layer Composition on GaAs Substrate
Author:
Affiliation:
1. Univ. of Miyazaki, 1-1, Gakuen Kibanadai Nishi, Miyazaki city,Miyazaki,Japan,889-2192
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10302729/10302732/10302837.pdf?arnumber=10302837
Reference6 articles.
1. Metamorphic growth of 1.25–1.29μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy
2. InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffers
3. Molecular beam epitaxial growth and characteristics of 1.52 μm metamorphic InAs quantum dot lasers on GaAs
4. Low threshold current density 1.3 [micro sign]m metamorphic InGaAs/GaAs quantum well laser diodes
5. Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
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