Strain engineered InAs/GaAs quantum dots for 1.5 μm emitters
Author:
Affiliation:
1. Centre for Electronic Materials and Devices, Imperial College London SW7 2BZ, United Kingdom
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303051
Reference8 articles.
1. 1.3 µm Room Temperature Emission from InAs/GaAs Self-Assembled Quantum Dots
2. Effect of growth rate on the size, composition, and optical properties of InAs/GaAs quantum dots grown by molecular-beam epitaxy
3. Strain and electronic interactions in InAs/GaAs quantum dot multilayers for 1300 nm emission
4. 1.3 μm photoluminescence from InGaAs quantum dots on GaAs
5. Independent manipulation of density and size of stress-driven self-assembled quantum dots
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